EFFECT OF SIH4/CH4 FLOW RATIO ON THE GROWTH OF BETA-SIC ON SI BY ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION AT 500-DEGREES-C

β-SiC (3C-SiC) films were deposited on silicon substrates by electron cyclotron resonance chemical vapor deposition from SiH4/CH4/H2 mixtures at 500°C. The crystalline structure and chemical composition of the deposited film were found to depend on the SiH4/CH4 flow ratio. With a sufficient energy supply from microwave power and a SiH4/CH4 flow ratio of 0.5 and lower, stoichiometric SiC could be deposited on Si substrates. Microcrystalline β-SiC was grown at a SiH4/CH4 flow ratio of 0.5, whereas amorphous SiC was obtained at the SiH4/CH4 flow ratios lower than 0.5. When the SiH4/CH4 flow ratio was above 0.5, only polycrystalline Si could be deposited. © 1995 American Institute of Physics.