Morphological and structural transitions in GaN films grown on sapphire by metal-organic chemical vapor deposition

被引：100

作者：

Wu, XH ^{[1
]}

Fini, P ^{[1
]}

Keller, S ^{[1
]}

Tarsa, EJ ^{[1
]}

Heying, B ^{[1
]}

Mishra, UK ^{[1
]}

DenBaars, SP ^{[1
]}

Speck, JS ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA, COLL ENGN, DEPT ELECT & COMP ENGN, SANTA BARBARA, CA 93106 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1996年 / 35卷 / 12B期

关键词：

GaN; sapphire; metal-organic chemical vapor deposition; facet; morphology; dislocations;

D O I：

10.1143/JJAP.35.L1648

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The structural and morphological evolution of GaN films grown by MOCVD at high temperature (1080 degrees C) on a low temperature grown GaN nucleation layer (NL) on (0001) sapphire were studied using atomic force microscopy (AFM), transmission electron microscopy (TEM) and photoluminescence (PL) measurements. The high temperature (HT) GaN layers were found to grow by initially forming isolated truncated hexagonal islands having {10 (1) over bar 1} facet planes and a top (0001) plane. The non-wetting or partial wetting behavior of the HT GaN on the GaN NL is attributed to both the roughness and predominantly cubic nature of the NL.

引用

页码：L1648 / L1651

页数：4

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