Switching of saturation magnetization by carrier injection in YBa2Cu3O7-δ/α-Fe2O3/Nb-SrTiO3 junctions

被引：15

作者：

Chen, Yuansha ^{[2
,3
]}

Lian, Guijun ^{[3
]}

Xiong, Guangcheng ^{[1
]}

Venkatesan, T. ^{[1
,4
,5
]}

机构：

[1] Natl Univ Singapore, NUSNNI NanoCore, Singapore 117576, Singapore

[2] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

[3] Peking Univ, Dept Phys, Beijing 100871, Peoples R China

[4] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore

[5] Natl Univ Singapore, Dept Phys, Singapore 117576, Singapore

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 23期

关键词：

TRANSITION; FILMS;

D O I：

10.1063/1.3589351

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ferromagnetic (FM) alpha-Fe2O3 layers were deposited on n-type oxide semiconductor substrates of Nb-doped SrTiO3 (NSTO) to form YBa2Cu3O7-(delta)/alpha-Fe2O3/NSTO junctions. Multilevel resistance switching behavior was observed in YBa2Cu3O7-(delta)/alpha-Fe2O3/NSTO junctions with stable resistive states. The saturation magnetization MS of the YBa2Cu3O7-(delta)/alpha-Fe2O3/NSTO junctions was modulated by carrier injection and correlated with the conductivity of the switched state. This is the first report of simultaneous modulation of intrinsic magnetic and transport properties for FM oxide devices by using carrier injection. (C) 2011 American Institute of Physics. [doi:10.1063/1.3589351]

引用

页数：3

共 13 条

[1] Current switching of resistive states in magnetoresistive manganites [J].

Asamitsu, A ;

Tomioka, Y ;

Kuwahara, H ;

Tokura, Y .

NATURE, 1997, 388 (6637) :50-52

[2]

Chen YS, 2009, CHINESE PHYS LETT, V26, DOI 10.1088/0256-307X/26/1/017305

[3] Resistance and superconductivity switching caused by carrier injection: Evidences of self-trapping carriers in oxide electronics [J].

Chen, Yuansha ;

Chen, Liping ;

Lian, Guijun ;

Xiong, Guangcheng .

JOURNAL OF APPLIED PHYSICS, 2009, 106 (02)

[4] ELECTRICAL PHENOMENA IN AMORPHOUS OXIDE FILMS [J].

DEARNALEY, G ;

STONEHAM, AM ;

MORGAN, DV .

REPORTS ON PROGRESS IN PHYSICS, 1970, 33 (11) :1129-+

[5]

Greedon J.E., 1994, ENCY INORGANIC CHEM

[6] Interfacial characteristics of a Fe3O4/Nb(0.5%):SrTiO3 oxide junction [J].

Kundaliya, Darshan C. ;

Ogale, S. B. ;

Fu, L. F. ;

Welz, S. J. ;

Higgins, J. S. ;

Langham, G. ;

Dhar, S. ;

Browning, N. D. ;

Venkatesan, T. .

JOURNAL OF APPLIED PHYSICS, 2006, 99 (08)

[7] Electric-pulse-induced reversible resistance change effect in magnetoresistive films [J].

Liu, SQ ;

Wu, NJ ;

Ignatiev, A .

APPLIED PHYSICS LETTERS, 2000, 76 (19) :2749-2751

[8] METAL-INSULATOR TRANSITION [J].

MOTT, NF .

REVIEWS OF MODERN PHYSICS, 1968, 40 (04) :677-&

[9] Interface resistance switching at a few nanometer thick perovskite manganite active layers [J].

Sawa, A. ;

Fujii, T. ;

Kawasaki, M. ;

Tokura, Y. .

APPLIED PHYSICS LETTERS, 2006, 88 (23)

[10] Resistive switching in transition metal oxides [J].

Sawa, Akihito .

MATERIALS TODAY, 2008, 11 (06) :28-36

← 1 2 →