Indium √7x√3 on Si(111):: A nearly free electron metal in two dimensions -: art. no. 246404

被引:102
作者
Rotenberg, E
Koh, H
Rossnagel, K
Yeom, HW
Schäfer, J
Krenzer, B
Rocha, MP
Kevan, SD
机构
[1] Lawrence Berkeley Lab, Adv Light Source, Berkeley, CA 94720 USA
[2] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea
[3] Univ Augsburg, Inst Phys, D-86159 Augsburg, Germany
[4] Univ Oregon, Dept Phys, Eugene, OR 97403 USA
关键词
D O I
10.1103/PhysRevLett.91.246404
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We present measurements of the Fermi surface and underlying band structure of a single layer of indium on Si(111) with root7xroot3 periodicity. Electrons from both indium valence electrons and silicon dangling bonds contribute to a nearly free, two-dimensional metal on a pseudo-4-fold lattice, which is almost completely decoupled at the Fermi level from the underlying hexagonal silicon lattice. The mean free path inferred from our data is quite long, suggesting the system might be a suitable model for studying the ground state of two-dimensional metals.
引用
收藏
页码:1 / 246404
页数:4
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