48 GHz digital ICs using transferred-substrate HBTs

被引：7

作者：

Rodwell, M ^{[1
]}

Lee, Q ^{[1
]}

Mensa, D ^{[1
]}

Pullela, R ^{[1
]}

Guthrie, J ^{[1
]}

Martin, SC ^{[1
]}

Smith, RP ^{[1
]}

Jaganathan, S ^{[1
]}

Mathew, T ^{[1
]}

Agarwal, B ^{[1
]}

Long, S ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

GAAS IC SYMPOSIUM - 20TH ANNUAL, TECHNICAL DIGEST 1998 | 1998年

关键词：

heterojunction bipolar transistor; HBT; transferred-substrate; static frequency divider;

D O I：

10.1109/GAAS.1998.722641

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using substrate transfer processes, we have fabricated heterojunction bipolar transistors with submicron emitter-base and collector-base junctions, minimizing RC parasitics and increasing f(max) to 500 GHz. The process also provides a microstrip wiring environment on a low-epsilon(r) dielectric substrate. First design iterations of ECL master-slave hip-hops exhibit 48 GHz maximum clock frequency when connected as static frequency dividers.

引用

页码：113 / 116

页数：4

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