High-brightness inverted InGaN-GaN multiple-quantum-well light-emitting diodes without a transparent conductive layer

被引：25

作者：

Lee, CM ^{[1
]}

Chuo, CC

Chen, IL

Chang, JC

Chyi, JI

机构：

[1] Natl Cent Univ, Dept Elect Engn, Chungli 32054, Taiwan

[2] Tekcore Co Ltd, Nantou 540, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2003年 / 24卷 / 03期

关键词：

GaN; inverse light-emitting diodes; light-emitting diodes (LEDs); tunneling;

D O I：

10.1109/LED.2003.809533

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Unlike the conventional, layer structure of an InGaN-GaN multiple-quantum-well light-emitting diode (LED), an LED with reversed p-type and n-type layer sequence, and an n+/p+ tunnel junction has been investigated. When operated at 20 mA, the output power of the inverted LED is almost twice that of the conventional LED. Since the structures of these two LEDs are alike when analyzed by X-ray diffraction, the improvement in the light intensity could be attributed to the elimination of the absorption/reflection by the transparent conductive layer and/or some quality improvement of p-type GaN in the inverted LED.

引用

页码：156 / 158

页数：3

共 12 条

[1] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER [J].