Low-resistance nonalloyed ohmic contact to p-type GaN using strained InGaN contact layer

被引：51

作者：

Kumakura, K ^{[1
]}

Makimoto, T ^{[1
]}

Kobayashi, N ^{[1
]}

机构：

[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 16期

关键词：

D O I：

10.1063/1.1410336

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A strained InGaN contact layer inserted between Pd/Au and p-type GaN resulted in low ohmic contact resistance without any special treatments. The thickness and In mole fraction of the p-type InGaN varied from 2 nm to 15 nm and from 0.14 to 0.23, respectively. Strained InGaN layers are effective in reducing the contact resistance. A contact layer of 2 nm thick strained In0.19Ga0.81N showed the lowest specific contact resistance of 1.1x10(-6) Omega cm(2). The mechanism for the lower contact resistance is ascribed to enhanced tunneling transport due to large polarization-induced band bending at the surface as well as to the high hole concentration in p-type InGaN. (C) 2001 American Institute of Physics.

引用

页码：2588 / 2590

页数：3

共 18 条

[1] Elastic strain relaxation and piezoeffect in GaN-AlN, GaN-AlGaN and GaN-InGaN superlattices [J].

Bykhovski, AD ;

Gelmont, BL ;

Shur, MS .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (09) :6332-6338

[2] Low-resistance ohmic contacts to p-type GaN [J].

Ho, JK ;

Jong, CS ;

Chiu, CC ;

Huang, CN ;

Chen, CY ;

Shih, KK .

APPLIED PHYSICS LETTERS, 1999, 74 (09) :1275-1277

[3] Formation of low resistance Pt ohmic contacts to p-type GaN using two-step surface treatment [J].

Jang, JS ;

Park, SJ ;

Seong, TY .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (06) :2667-2670

[4] Metallization scheme for highly low-resistance, transparent, and thermally stable Ohmic contacts to p-GaN [J].

Jang, JS ;

Park, SJ ;

Seong, TY .

APPLIED PHYSICS LETTERS, 2000, 76 (20) :2898-2900

[5] Low resistance Pd/Au ohmic contacts to p-type GaN using surface treatment [J].

Kim, JK ;

Lee, JL ;

Lee, JW ;

Shin, HE ;

Park, YJ ;

Kim, T .

APPLIED PHYSICS LETTERS, 1998, 73 (20) :2953-2955

[6] Enhanced Mg doping efficiency in Al0.2Ga0.8N/GaN superlattices [J].

Kozodoy, P ;

Hansen, M ;

DenBaars, SP ;

Mishra, UK .

APPLIED PHYSICS LETTERS, 1999, 74 (24) :3681-3683

[7] Increased electrical activity of Mg-acceptors in AlxGa1-xN/GaN superlattices [J].

Kumakura, K ;

Kobayashi, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (9AB) :L1012-L1014

[8] Efficient hole generation above 1019 cm-3 in Mg-doped InGaN/GaN superlattices at room temperature [J].

Kumakura, K ;

Makimoto, T ;

Kobayashi, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (3AB) :L195-L196

[9]

Kumakura K, 2000, IPAP CONFERENCE SER, V1, P797

[10] High hole concentrations in Mg-doped InGaN grown by MOVPE [J].

Kumakura, K ;

Makimoto, T ;

Kobayashi, N .

JOURNAL OF CRYSTAL GROWTH, 2000, 221 :267-270

← 1 2 →