Metallization scheme for highly low-resistance, transparent, and thermally stable Ohmic contacts to p-GaN

被引：61

作者：

Jang, JS ^{[1
]}

Park, SJ ^{[1
]}

Seong, TY ^{[1
]}

机构：

[1] Kwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 20期

关键词：

D O I：

10.1063/1.126510

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on a promising metallization scheme for high-quality Ohmic contacts to surface-treated p-GaN:Mg (2-3x10(17) cm(-3)). It is shown that the as-deposited Pt/Ru contact produces a specific contact resistance of 7.8(+/- 2.2)x10(-4) Omega cm(2). However, annealing of the contact at 600 degrees C for 2 min results in a resistance of 2.2(+/- 2.0)x10(-6) Omega cm(2). It is also shown that the light transmittance of the annealed contact is 87.3% at 470 nm. Furthermore, the surface of the contact annealed at 600 degrees C for 30 min is found to be very smooth with a rms roughness of 0.8 nm. These results strongly indicate that the Pt/Ru can be a suitable scheme for the fabrication of high-performance laser diodes or other devices. (C) 2000 American Institute of Physics. [S0003- 6951(00)00220-5].

引用

页码：2898 / 2900

页数：3

共 20 条

[1] Study of oxygen chemisorption on the GaN(0001)-(1x1) surface [J].

Bermudez, VM .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (02) :1190-1200

[2] Thermal stability of W and WSix contacts on p-GaN [J].

Cao, XA ;

Pearton, SJ ;

Ren, F ;

Lothian, JR .

APPLIED PHYSICS LETTERS, 1998, 73 (07) :942-944

[3]

HUTCHINSON JM, 1990, BINARY ALLOY PHASE D, P3123

[4]

JANG JK, UNPUB

[5] Formation of low resistance Pt ohmic contacts to p-type GaN using two-step surface treatment [J].

Jang, JS ;

Park, SJ ;

Seong, TY .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (06) :2667-2670

[6] Low-resistance Pt/Ni/Au ohmic contacts to p-type GaN [J].

Jang, JS ;

Chang, IS ;

Kim, HK ;

Seong, TY ;

Lee, SH ;

Park, SJ .

APPLIED PHYSICS LETTERS, 1999, 74 (01) :70-72

[7] Ohmic contacts to p-type GaN using a Ni/Pt/Au metallization scheme [J].

Jang, JS ;

Park, KH ;

Jang, HK ;

Kim, HG ;

Park, SJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (06) :3105-3107

[8] Interfacial reaction of Ni/Pt/Au contact schemes to p-type GaN [J].

Jang, JS ;

Park, SJ ;

Seong, TY .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1999, 146 (09) :3425-3428

[9]

KHAN MA, 1993, APPL PHYS LETT, V63, P1214, DOI 10.1063/1.109775

[10] HIGH-RESPONSIVITY PHOTOCONDUCTIVE ULTRAVIOLET SENSORS BASED ON INSULATING SINGLE-CRYSTAL GAN EPILAYERS [J].

KHAN, MA ;

KUZNIA, JN ;

OLSON, DT ;

VANHOVE, JM ;

BLASINGAME, M ;

REITZ, LF .

APPLIED PHYSICS LETTERS, 1992, 60 (23) :2917-2919

← 1 2 →