Efficient blue light emission from silicon -: The first integrated Si-based optocoupler

被引:33
作者
Rebohle, L
von Borany, J
Borchert, D
Fröb, H
Gebel, T
Helm, M
Möller, W
Skorupa, W
机构
[1] Rossendorf Inc, Forschungszentrum Rossendorf EV, Inst Ionenstrahlphys & Mat Forsch, D-01314 Dresden, Germany
[2] Nanoparc GmbH, D-01454 Dresden, Germany
[3] Fraunhofer Inst Solar Energy Syst, D-79100 Freiburg, Germany
[4] Tech Univ Dresden, Inst Angew Photophys, D-01062 Dresden, Germany
关键词
D O I
10.1149/1.1375005
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
We present the first all-silicon integrated optocoupler, whose fabrication, using ion implantation into SiO2, is completely compatible with standard Si technology. It is based on Ge-implanted SiO2 layers as light emitter exhibiting bright blue-violet electroluminescence light with a record wall-plug efficiency of 0.5%. The electroluminescence is explained with a model in which electrons enter the SiO2 layer via tunnel injection and excite the luminescence centers by impact excitation or field ionization. A radiative T-1-S-0 transition of these luminescence centers then causes the observed electroluminescence. Finally, we show that these optocoupling devices hold great promise for integrated optoelectronic applications, especially in the field of sensor and biotechnology. (C) 2001 The Electrochemical Society.
引用
收藏
页码:G57 / G60
页数:4
相关论文
共 25 条
[1]   SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].
CANHAM, LT .
APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048
[2]   Light emission from Er-doped Si: Materials properties, mechanisms, and device performance [J].
Coffa, S ;
Franzo, G ;
Priolo, F .
MRS BULLETIN, 1998, 23 (04) :25-32
[3]   OPTICAL ACTIVATION AND EXCITATION MECHANISMS OF ER IMPLANTED IN SI [J].
COFFA, S ;
PRIOLO, F ;
FRANZO, G ;
BELLANI, V ;
CARNERA, A ;
SPINELLA, C .
PHYSICAL REVIEW B, 1993, 48 (16) :11782-11788
[4]   Modulation speed of an efficient porous silicon light emitting device [J].
Cox, TI ;
Simons, AJ ;
Loni, A ;
Calcott, PDJ ;
Canham, LT ;
Uren, MJ ;
Nash, KJ .
JOURNAL OF APPLIED PHYSICS, 1999, 86 (05) :2764-2773
[5]  
Fauchet PM, 1998, PHYS STATUS SOLIDI A, V165, P3, DOI 10.1002/(SICI)1521-396X(199801)165:1<3::AID-PSSA3>3.0.CO
[6]  
2-T
[7]   Mechanism and performance of forward and reverse bias electroluminescence at 1.54 mu m from Er-doped Si diodes [J].
Franzo, G ;
Coffa, S ;
Priolo, F ;
Spinella, C .
JOURNAL OF APPLIED PHYSICS, 1997, 81 (06) :2784-2793
[8]   Enhanced rare earth luminescence in silicon nanocrystals [J].
Franzò, G ;
Iacona, F ;
Vinciguerra, V ;
Priolo, F .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 69 :335-339
[9]  
GEBEL T, Patent No. 100112587
[10]   Electroluminescence with high and stable quantum efficiency and low threshold voltage from anodically oxidized thin porous silicon diode [J].
Gelloz, B ;
Koshida, N .
JOURNAL OF APPLIED PHYSICS, 2000, 88 (07) :4319-4324