Nucleation and growth modes of ZnO deposited on 6H-SiC substrates

被引：23

作者：

Ashrafi, ABMA ^{[1
]}

Segawa, Y

Shin, K

Yoo, J

Yao, T

机构：

[1] RIKEN, Photodynam Res Ctr, Lab Photophys, Sendai, Miyagi 9800845, Japan

[2] Tohoku Univ, Program Interdisciplinary Res, Sendai, Miyagi 9808578, Japan

来源：

APPLIED SURFACE SCIENCE | 2005年 / 249卷 / 1-4期

关键词：

nucleation; growth modes of ZnO; role of biaxial strain; interface geometry;

D O I：

10.1016/j.apsusc.2004.11.057

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

ZnO nucleated initially with two-dimensional (2D) islands on 6H-SiC substrates. With the increase of ZnO layer thickness, however, the 2D islands led to coalescence and grain growths. The aspect ratios of these islands/coalescences/grains were found to be thickness dependence that has been interpreted by a schematic model. The growth mode transition from 2D islands to three-dimensional (3D) grains is the result of strain energy relaxation accumulated by lattice and thermal mismatches. An analog result diffracted in transmission electron microscopy with misfit dislocations that extended into the ZnO epilayers to be <= 150 nm. The secondary ion-mass spectroscopy analysis exhibited anomalous impurities contributed by an interdiffusion in between ZnO and SiC materials. (c) 2004 Elsevier B.V. All rights reserved.

引用

页码：139 / 144

页数：6

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