Photoluminescence investigation of phononless radiative recombination and thermal-stability of germanium hut clusters on silicon(001)

被引：81

作者：

Dashiell, MW ^{[1
]}

Denker, U ^{[1
]}

Schmidt, OG ^{[1
]}

机构：

[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 14期

关键词：

D O I：

10.1063/1.1405148

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Intense photoluminescence (PL) originating from single layers of germanium hut clusters grown on silicon (001) is investigated using PL spectroscopy. We propose that the luminescence originates from phononless recombination within a spatially indirect, type-II neighboring confinement structure. Enhanced no-phonon (NP) luminescence is attributed to exciton localization at the Ge/Si interfaces. The PL intensity is sensitive to the growth temperature during interface formation, as well as to post-growth thermal annealing, illustrating the influence of atomic-level Si-Ge intermixing on exciton localization and NP enhancement. (C) 2001 American Institute of Physics.

引用

页码：2261 / 2263

页数：3

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