Pattern of x-ray scattering by thermal phonons in Si

被引：21

作者：

Wu, Z

Hong, HW

Aburano, R

Zschack, P

Jemian, P

Tischler, J

Chen, HD

Luh, DA

Chiang, TC

机构：

[1] Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA

[2] Univ Illinois, Dept Phys, Urbana, IL 61801 USA

[3] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA

[4] Oak Ridge Natl Lab, Div Solid State, Oak Ridge, TN 37831 USA

来源：

PHYSICAL REVIEW B | 1999年 / 59卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.59.3283

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Intensity distribution of x-ray scattering by thermal phonons in Si was recorded using synchrotron undulator radiation. A high-energy beam sent through a Si(lll) wafer in a transmission Laue geometry yielded a threefold symmetric pattern for the scattering cross section with rich details governed by phonon dispersion, population, and polarization. [S0163-1829(99)08105-9].

引用

页码：3283 / 3286

页数：4

共 6 条

[1] ELECTRONIC CHARGE-DISTRIBUTION IN SILICON [J].