ELECTRONIC CHARGE-DISTRIBUTION IN SILICON

被引：39

作者：

DEUTSCH, M

HART, M

机构：

来源：

PHYSICAL REVIEW B | 1985年 / 31卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.31.3846

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3846 / 3858

页数：13

共 71 条

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[9] THE MEASUREMENT OF THE X-RAY-SCATTERING FACTORS OF SILICON FROM THE FINE-STRUCTURE OF LAUE-CASE ROCKING CURVES [J].

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