Surface treatment effect on the poly-Si TFTs fabricated by electric field enhanced crystallization of Ni/a-Si:H films

被引：2

作者：

Kim, B ^{[1
]}

Kim, HY ^{[1
]}

Seo, HS ^{[1
]}

Kim, SK ^{[1
]}

Kim, CD ^{[1
]}

机构：

[1] LG Philips LCD Res & Dev Ctr, Kyonggi Do 430080, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2003年 / 24卷 / 12期

关键词：

H2O : HF : H2O2 solution; leakage current; nickel; poly-Si; surface treatment;

D O I：

10.1109/LED.2003.820626

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Self-aligned, p-channel polycrystalline silicon thin-film transistors (TFTs) were fabricated by electric field enhanced crystallization of a-Si:H in contact with the Ni catalyst, where a chemical solution of 97.5% H2O : 1 % HF : 1.5% H2O2 was used for a surface treatment on polycrystalline silicon films. The wet surface treatment was found to remarkably improve the electrical properties of TFTs, especially the leakage current and subthreshold slope. The enhanced performance was confirmed to be from the removal of the Ni impurity remaining as defect states at the surface and also from the ameliorated surface roughness of the polycrystalline silicon films.

引用

页码：733 / 735

页数：3

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