Decrease in the leakage current density of Si-based metal-oxide-semiconductor diodes by cyanide treatment

被引：39

作者：

Asano, A

Asuha

Maida, O

Todokoro, Y

Kobayashi, H

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan

[2] Osaka Univ, Japan Sci & Technol Corp, CREST, Osaka 5670047, Japan

[3] Matsushita Elect Ind Co Ltd, Semicond Co, Technol Liaison Off, Minato Ku, Tokyo 1058586, Japan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 24期

关键词：

D O I：

10.1063/1.1484249

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Crown-ether cyanide treatment, which includes the immersion of Si in KCN solutions containing 18-crown-6 molecules, is found to greatly decrease the leakage current density of Si-based metal-oxide-semiconductor (MOS) diodes. The decrease by one order of magnitude for the single crystalline Si-based MOS diodes is attributable to the elimination of Si/SiO2 interface states by reaction with cyanide ions and formation of Si-CN bonds. The reduction in the leakage current density by two orders of magnitude is caused for polycrystalline Si-based MOS diodes, and this decrease is attributed to the passivation of trap states in poly-Si as well as the interface states. (C) 2002 American Institute of Physics.

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页码：4552 / 4554

页数：3

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