High-Fidelity Conformation of Graphene to SiO2 Topographic Features

被引：118

作者：

Cullen, W. G. ^{[1
,2
]}

Yamamoto, M. ^{[1
,2
]}

Burson, K. M. ^{[1
,2
]}

Chen, J. H. ^{[1
,2
]}

Jang, C. ^{[2
]}

Li, L. ^{[2
]}

Fuhrer, M. S. ^{[1
,2
]}

Williams, E. D. ^{[1
,2
]}

机构：

[1] Univ Maryland, Dept Phys, Mat Res Sci & Engn Ctr, College Pk, MD 20742 USA

[2] Univ Maryland, Dept Phys, Ctr Nanophys & Adv Mat, College Pk, MD 20742 USA

来源：

PHYSICAL REVIEW LETTERS | 2010年 / 105卷 / 21期

关键词：

CARBON NANOTUBES; DEFORMATION; MEMBRANES;

D O I：

10.1103/PhysRevLett.105.215504

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

High-resolution noncontact atomic force microscopy of SiO2 reveals previously unresolved roughness at the few-nm length scale, and scanning tunneling microscopy of graphene on SiO2 shows graphene to be slightly smoother than the supporting SiO2 substrate. A quantitative energetic analysis explains the observed roughness of graphene on SiO2 as extrinsic, and a natural result of highly conformal adhesion. Graphene conforms to the substrate down to the smallest features with nearly 99% fidelity, indicating conformal adhesion can be highly effective for strain engineering of graphene.

引用

页数：4

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