Spin-splitting of the subbands of InGaAs-InP and other 'no common atom' quantum wells

被引：35

作者：

Vervoort, L ^{[1
]}

Ferreria, R ^{[1
]}

Voisin, P ^{[1
]}

机构：

[1] Ecole Normale Super, Phys Mat Condensee Lab, F-75005 Paris 5, France

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1999年 / 14卷 / 03期

关键词：

D O I：

10.1088/0268-1242/14/3/004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this article we calculate the effect of the native interface asymmetry on the band structure of 'no common atom' quantum wells such as (InGa)As-InP. We show that it leads to a new contribution to the spin-splitting in both the valence and conduction subbands. The splitting appears to be anisotropic and at least one order of magnitude larger in the valence subbands than in the conduction subbands.

引用

页码：227 / 230

页数：4

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