Semiconductor-enriched single wall carbon nanotube networks applied to field effect transistors

被引：126

作者：

Izard, N. ^{[1
]}

Kazaoui, S. ^{[1
]}

Hata, K. ^{[1
]}

Okazaki, T. ^{[1
]}

Saito, T. ^{[1
]}

Iijima, S. ^{[1
]}

Minami, N. ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tsukuba 3058565, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 24期

基金：

日本学术振兴会;

关键词：

D O I：

10.1063/1.2939560

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Substantial progress on field effect transistors (FETs) consisting of semiconducting single wall carbon nanotubes (s-SWNTs) without detectable traces of metallic nanotubes and impurities is reported. Nearly perfect removal of metallic nanotubes is confirmed by optical absorption, Raman measurements, and electrical measurements. This outstanding result was made possible in particular by ultracentrifugation (150 000 g) of solutions prepared from SWNT powders using polyfluorene as an extracting agent in toluene. Such s-SWNTs processable solutions were applied to realize FET, embodying randomly or preferentially oriented nanotube networks prepared by spin coating or dielectrophoresis. Devices exhibit stable p-type semiconductor behavior in air with very promising characteristics. The on-off current ratio is 10(5), the on-current level is around 10 mu A, and the estimated hole mobility is larger than 2 cm(2)/V s.

引用

页数：3

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