Solution-processed single-walled carbon nanotube transistors with high mobility and large on/off ratio

被引：27

作者：

Fukao, Tomohiro ^{[1
]}

Nakamura, Shuichi

Kataura, Hiromichi

Shiraishi, Masashi

机构：

[1] Osaka Univ, Grad Sch Engn Sci, Toyonaka, Osaka 5608531, Japan

[2] AIST Nanotech Res Inst, Tsukuba, Ibaraki 3058562, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 8A期

关键词：

carbon nanotube; solution process; field-effect transistor; organic semiconductor; mobility; carrier injection; Schottky barrier;

D O I：

10.1143/JJAP.45.6524

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have examined the device characteristics of solution-processed single-walled carbon nanotube (SWNT) transistors. By using an electrical breakdown, SWNT-field-effect transistors (FETs) exhibited an on/off ratio (I-on/I-off) of 10(4) and a field-effect mobility of 3.6 cm(2) V-1 S-1 in air, which are comparable to those of other organic FETs. We investigated the detailed mechanism of carrier injection from electrode metals into SWNTs. From the temperature dependence of source-drain current, we evaluated the effective Schottky barrier height for holes to be 170 meV.

引用

页码：6524 / 6527

页数：4

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