Effect of epitaxial strain on ferroelectric polarization in multiferroic BiFeO3 films

被引:139
作者
Kim, Dae Ho [1 ]
Lee, Ho Nyung [1 ]
Biegalski, Michael D. [2 ]
Christen, Hans M. [1 ,2 ]
机构
[1] Oak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA
[2] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA
关键词
D O I
10.1063/1.2830799
中图分类号
O59 [应用物理学];
学科分类号
摘要
Multiferroic BiFeO3 epitaxial films with thicknesses ranging from 40 to 960 nm were grown by pulsed laser deposition on SrTiO3 (001) substrates with SrRuO3 bottom electrodes. X-ray characterization shows that the structure evolves from angularly distorted tetragonal with c/a approximate to 1.04 to more bulklike distorted rhombohedral (c/a approximate to 1.01) as the strain relaxes with increasing thickness. Despite this significant structural evolution, the ferroelectric polarization along the body diagonal of the distorted pseudocubic unit cells, as calculated from measurements along the normal direction, barely changes. (c) 2008 American Institute of Physics.
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页数:3
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共 25 条
[1]  
[Anonymous], 1985, PHYS PROPERTIES CRYS
[2]   Investigation on the origin of the magnetic moment of BiFeO3 thin films by advanced X-ray characterizations [J].
Bea, Helene ;
Bibes, Manuel ;
Fusil, Stephane ;
Bouzehouane, Karim ;
Jacquet, Eric ;
Rode, Karsten ;
Bencok, Peter ;
Barthelemy, Agnes .
PHYSICAL REVIEW B, 2006, 74 (02)
[3]   Enhancement of ferroelectricity in strained BaTiO3 thin films [J].
Choi, KJ ;
Biegalski, M ;
Li, YL ;
Sharan, A ;
Schubert, J ;
Uecker, R ;
Reiche, P ;
Chen, YB ;
Pan, XQ ;
Gopalan, V ;
Chen, LQ ;
Schlom, DG ;
Eom, CB .
SCIENCE, 2004, 306 (5698) :1005-1009
[4]   The growth and properties of epitaxial KNbO3 thin films and KNbO3/KTaO3 superlattices [J].
Christen, HM ;
Boatner, LA ;
Budai, JD ;
Chisholm, MF ;
Gea, LA ;
Marrero, PJ ;
Norton, DP .
APPLIED PHYSICS LETTERS, 1996, 68 (11) :1488-1490
[5]   Ferroelectric size effects in multiferroic BiFeO3 thin films [J].
Chu, Y. H. ;
Zhao, T. ;
Cruz, M. P. ;
Zhan, Q. ;
Yang, P. L. ;
Martin, L. W. ;
Huijben, M. ;
Yang, C. H. ;
Zavaliche, F. ;
Zheng, H. ;
Ramesh, R. .
APPLIED PHYSICS LETTERS, 2007, 90 (25)
[6]   Synthesis and ferroelectric properties of epitaxial BiFeO3 thin films grown by sputtering [J].
Das, R. R. ;
Kim, D. M. ;
Baek, S. H. ;
Eom, C. B. ;
Zavaliche, F. ;
Yang, S. Y. ;
Ramesh, R. ;
Chen, Y. B. ;
Pan, X. Q. ;
Ke, X. ;
Rzchowski, M. S. ;
Streiffer, S. K. .
APPLIED PHYSICS LETTERS, 2006, 88 (24)
[7]   Depolarization corrections to the coercive field in thin-film ferroelectrics [J].
Dawber, M ;
Chandra, P ;
Littlewood, PB ;
Scott, JF .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2003, 15 (24) :L393-L398
[8]   Effect of epitaxial strain on the spontaneous polarization of thin film ferroelectrics [J].
Ederer, C ;
Spaldin, NA .
PHYSICAL REVIEW LETTERS, 2005, 95 (25)
[9]   Influence of strain and oxygen vacancies on the magnetoelectric properties of multiferroic bismuth ferrite [J].
Ederer, C ;
Spaldin, NA .
PHYSICAL REVIEW B, 2005, 71 (22)
[10]   Strain relaxation and critical temperature in epitaxial ferroelectric Pb(Zr0.20Ti0.80)O3 thin films [J].
Gariglio, S. ;
Stucki, N. ;
Triscone, J.-M. ;
Triscone, G. .
APPLIED PHYSICS LETTERS, 2007, 90 (20)