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Temperature dependence of InGaP/GaAs heterojunction bipolar transistor DC and small-signal behavior

被引：33
作者：
Ahmari, DA
Raghavan, G
Hartmann, QJ
Hattendorf, ML
Feng, M
Stillman, GE
机构：
[1] Univ Illinois, Dept Elect & Comp Engn, Microelect Lab, Urbana, IL 61801 USA
[2] Hughes Res Labs, Malibu, CA 90265 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1999年 / 46卷 / 04期
关键词：
bipolar transistor; GaAs; heterojunction indium gallium phosphide; InGaP; temperature;
D O I：
10.1109/16.753694
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This work describes the temperature dependence of the de and small-signal performance of InGaP/GaAs heterojunction bipolar transistors (HBT's) with different collector thicknesses. Detailed analyses of the small-signal performance and the temperature dependence of both de and high-frequency parameters are presented. rin HBT delay-time analysis is also presented and justified empirically. In addition, the factors causing the decrease in f(T) with temperature are described, and the variations in collector resistance and collector drift velocity with temperature are determined.
引用
收藏
页码：634 / 640
页数：7
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