DEVICE-RELATED MATERIAL PROPERTIES OF HEAVILY DOPED GALLIUM-ARSENIDE

被引:33
作者
LUNDSTROM, MS [1 ]
KLAUSMEIERBROWN, ME [1 ]
MELLOCH, MR [1 ]
AHRENKIEL, RK [1 ]
KEYES, BM [1 ]
机构
[1] SOLAR ENERGY RES INST,GOLDEN,CO 80401
关键词
D O I
10.1016/0038-1101(90)90182-E
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Heavy impurity doping perturbs the energy-band structure of GaAs thereby influencing both the optical and electrical properties of devices. This paper examines the effects of heavy doping on material parameters important for GaAs-based bipolar devices. A broad range of experimental work directed at characterizing the doping-dependent equilibrium np product, minority carrier mobility, and minority carrier lifetime is reviewed. To facilitate device modeling, parameteric fits to the measured results are presented when appropriate. Implications for devices are then considered, and shown to be strong. Finally, the significant uncertainties and characterization needs that remain are identified. © 1990.
引用
收藏
页码:693 / 704
页数:12
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