Influence of In incorporation on the electronic structure of ZnO nanowires

被引：61

作者：

Bae, SY ^{[1
]}

Choi, HC ^{[1
]}

Na, CW ^{[1
]}

Park, J ^{[1
]}

机构：

[1] Korea Univ, Dept Chem, Jochiwon 339700, South Korea

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 03期

关键词：

D O I：

10.1063/1.1851591

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-density Zn0.85In0.15O and Zn0.75In0.25O nanowires were synthesized by thermal evaporation method. They consist of single-crystalline wurtzite ZnO structure with uniform [010] growth direction. X-ray diffraction (XRD) reveals the structural defects caused by the In incorporation. X-ray photoelectron spectrum (XPS) analysis suggests that In withdraw the electrons from Zn and increase the dangling-bond O 2p states. The lower energy shift and green-band enhancement of photoluminescence are well correlated with the results of XRD and XPS. (C) 2005 American Institute of Physics.

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页码：1 / 3

页数：3

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