Total ionizing dose effects in MOS oxides and devices

被引：735

作者：

Oldham, TR ^{[1
]}

McLean, FB ^{[1
]}

机构：

[1] NASA, Goddard Space Flight Ctr, QSS Grp Inc, Greenbelt, MD 20771 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2003年 / 50卷 / 03期

基金：

美国国家航空航天局;

关键词：

CMOS; ionizing radiation; microelectronics; MOS; radiation effects;

D O I：

10.1109/TNS.2003.812927

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reviews the basic physical mechanisms of the interactions of ionizing radiation with MOS oxides, including charge generation, transport, trapping and detrapping, and interface trap formation. Device and circuit effects are also discussed briefly.

引用

页码：483 / 499

页数：17

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