Structural influence on the electronic properties of methoxy substituted polyaniline/aluminum Schottky barrier diodes

被引：48

作者：

Huang, LM

Wen, TC ^{[1
]}

Gopalan, A

Ren, F

机构：

[1] Natl Cheng Kung Univ, Dept Chem Engn, Tainan 701, Taiwan

[2] Univ Florida, Dept Chem Engn, Tallahassee, FL 32611 USA

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2003年 / 104卷 / 1-2期

关键词：

methoxy substituted polyaniline; Schottky diode; electronic properties;

D O I：

10.1016/S0921-5107(03)00310-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Poly (o-methoxyaniline) (POMA) and poly(2,5-dimethoxyanitine) (PDMA) were used for fabricating Schottky diode devices with sandwich structure, as Al/POMA/indium tin oxide (ITO) coated glass and ITO/PDMA/Al. These devices exhibit rectifying behavior with differences in performance parameters like turn on voltage of the device, barrier height and saturation current density. A close comparison of the current (I)-voltage (V) characteristics reveals such differences. Cyclicvoltammetry and UV-Vis spectroscopy of POMA and PDMA films were used to obtain electrochemical and optical properties of the polymers and discussed in support of the observed differences in the electronic properties of the devices fabricated with POMA/PDMA. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：88 / 95

页数：8

共 31 条

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