PAni-PMMA blend/metal Schottky barriers

被引：40

作者：

Angappane, S

Kini, NR

Natarajan, TS

Rangarajan, G ^{[1
]}

Wessling, B

机构：

[1] Indian Inst Technol, Dept Phys, Madras 600036, Chennai, India

[2] Ormecon Chem, D-22949 Ammersbek, Germany

来源：

THIN SOLID FILMS | 2002年 / 417卷 / 1-2期

关键词：

Schottky barrier; polymers; electronic devices;

D O I：

10.1016/S0040-6090(02)00576-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report here the fabrication of Schottky barriers using polyaniline and insulating polymers like polymethylmethacrylate (PAni-PMMA) blends. The Schottky barriers were prepared by the thermal evaporation of gold metal electrodes on to freestanding films of the blends. The electrical characteristics of the barriers are found to depend on the work function of the PAni-PMMA blend, which in turn depend on the volume fraction of PAni. Current-voltage (I-V) and capacitance-voltage (C-V) measurements were used to characterize these devices. The values of various junction parameters such as ideality factor, barrier heights and rectification ratio were calculated. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：202 / 205

页数：4

共 17 条

[1] HIGH ELECTRICAL-CONDUCTIVITY IN DOPED POLYACETYLENE [J].