Reactive unbalanced magnetron sputtering of AlN thin films

被引：11

作者：

Buc, D

Hotovy, I

Hascik, S

Cerven, I

机构：

[1] Slovak Univ Technol Bratislava, Microelect Dept, Bratislava 81219, Slovakia

[2] Slovak Acad Sci, Inst Elect Engn, SK-84239 Bratislava, Slovakia

来源：

VACUUM | 1998年 / 50卷 / 1-2期

关键词：

D O I：

10.1016/S0042-207X(98)00100-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Aluminium nitride is of interest for potential use in various microelectronic and optoelectronic applications. C-axis oriented aluminium nitride (AIN) thin films on (100) silicon were prepared by DC balanced and/or unbalanced magnetron reactive sputtering from an Al target under different deposition conditions, specifically, in various external magnetic fields of an auxiliary magnetic coil. We found a correlation between the deposition conditions and the structure, the residual stress and the microhardness of the AIN films. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：121 / 123

页数：3

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