Step-flow growth of nanolaminate Ti3SiC2 epitaxial layers on 4H-SiC(0 0 0 1)

被引：13

作者：

Buchholt, Kristina ^{[1
]}

Eklund, Per ^{[1
]}

Jensen, Jens ^{[1
]}

Lu, Jun ^{[1
]}

Spetz, Anita Lloyd ^{[1
]}

Hultman, Lars ^{[1
]}

机构：

[1] Linkoping Univ, IFM, Dept Phys Chem & Biol, S-58183 Linkoping, Sweden

来源：

SCRIPTA MATERIALIA | 2011年 / 64卷 / 12期

关键词：

Sputtering; Atomic force microscopy (AFM); Helium ion microscopy (HIM); Transmission electron microscopy (TEM); Crystal structure; OHMIC CONTACTS; THIN-FILMS; M(N+1)AX(N) PHASES; MICROSCOPY; RESOLUTION; STABILITY; TITANIUM; TARGET;

D O I：

10.1016/j.scriptamat.2011.03.013

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Epitaxial Ti3SiC2(0 0 0 1) films were deposited on 4 degrees off-cut 4H-SiC(0 0 0 1) wafers using magnetron sputtering. A lateral step-flow growth mechanism of the Ti3SiC2 was discovered by X-ray diffraction, elastic recoil detection analysis, atomic force microscopy and electron microscopy. Helium ion microscopy revealed contrast variations on the Ti3SiC2 terraces, suggesting a mixed Si and Ti(C) termination. Si-rich growth conditions results in Ti3SiC2 layers with pronounced {1 1 (2) over bar 0) faceting and off-oriented TiSi2 crystallites, while stoichiometric growth yields truncated {1 (1) over bar 0 0) terrace edges. (C) 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：1141 / 1144

页数：4

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