Magnetron sputtering of Ti3SiC2 thin films,from a compound target

被引：59

作者：

Eklund, P. ^{[1
]}

Beckers, M. ^{[1
]}

Frodelius, J. ^{[1
]}

Hogberg, H. ^{[1
]}

Hultman, L. ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys Chem & Biol, Thin Film Phys Div, IFM, S-58183 Linkoping, Sweden

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2007年 / 25卷 / 05期

关键词：

D O I：

10.1116/1.2757178

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Ti3SiC2 thin films were synthesized by magnetron sputtering from Ti3SiC2 and Ti targets. Sputtering from a Ti3SiC2 target alone resulted in films with a C content of similar to 50 at. % or more, due to gas-phase scattering processes and differences in angular and energy distributions between species ejected from the target. Addition of Ti to the deposition flux from a Ti3SiC2 target is shown to bind the excess C in TiCx intergrown with Ti3SiC2 and Ti4SiC2. Additionally, a substoichiometric TiC, buffer layer is shown to serve as a C sink and enable the growth of Ti3SiC2. (c) 2007 American Vacuum Society.

引用

页码：1381 / 1388

页数：8

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