Angular distribution of atoms sputtered from germanium by 1-20 keV Ar ions

被引：13

作者：

Chernysh, V. S. ^{[1
]}

Patrakeev, A. S.

Shulga, V. I.

机构：

[1] Moscow MV Lomonosov State Univ, Fac Phys, Moscow 119992, Russia

[2] Moscow MV Lomonosov State Univ, Inst Nucl Phys, Moscow 119992, Russia

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 2006年 / 161卷 / 12期

关键词：

sputtering; angular distribution; germanium; experiment; computer simulation; surface topography;

D O I：

10.1080/10420150600966059

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

The angular distribution of atoms sputtered from germanium under 1-20 keV Ar+ ion bombardment (normal incidence) has been studied experimentally and using computer simulations. A collector technique combined with Rutherford backscattering to analyze the distribution of collected material was used. In addition, the surface topography was under control. It was found that the experimental angular distribution of sputtered atoms (E-0=3-10 keV) could be approximated by the function cos(n)theta with n approximate to 1.65. Such a high value of n is connected with the surface scattering of ejected atoms and a noticeable contribution of backscattered ions to the formation of the sputter flux (the mass effect). The target surface was found to be practically flat even at ion fluencies similar to 10(18) ions/cm(2). The results obtained are compared with data from the literature, including our recent data on Si sputtering.

引用

页码：701 / 707

页数：7

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