Angular distribution of atoms sputtered from silicon by 1-10 keV Ar ions

被引：10

作者：

Chernysh, VS ^{[1
]}

Kulikauskas, VS

Patrakeev, AS

Abdul-Cader, KM

Shulga, VI

机构：

[1] Moscow MV Lomonosov State Univ, Fac Phys, Moscow 119992, Russia

[2] Moscow MV Lomonosov State Univ, Inst Nucl Phys, Moscow 119992, Russia

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 2004年 / 159卷 / 03期

关键词：

sputtering; angular distribution; silicon; experiment; computer simulation;

D O I：

10.1080/10420150410001669613

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

The angular distribution of atoms sputtered from silicon under 1-10 keV Ar ion bombardment (normal incidence) has been studied experimentally and using computer simulation. It has been found that the angular distribution is overcosine in the whole energy range studied. This is connected with a high contribution of secondary knock-on atoms to the sputter flux (cascade sputtering). The simulated angular distributions are shown to be quite sensitive to the variation of the interatomic potential. The results obtained are compared with data from the literature.

引用

页码：149 / 155

页数：7

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