Dynamics of pattern formation during low-energy ion bombardment of Si(001)

被引：26

作者：

Chason, E ^{[1
]}

Erlebacher, J

Aziz, MJ

Floro, JA

Sinclair, MB

机构：

[1] Brown Univ, Div Engn, Providence, RI 02912 USA

[2] Harvard Univ, Cambridge, MA 02138 USA

[3] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2001年 / 178卷

关键词：

D O I：

10.1016/S0168-583X(01)00505-5

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Sputtering of surfaces by collimated, low-energy ion beams results in spontaneous pattern formation in many systems. In order to explore the mechanisms that control the pattern formation, we have used in situ light scattering to measure the evolution of sputtered Si(0 0 1) surfaces. The results are interpreted within a linear instability model originally proposed by R.M. Bradley and J.M.E. Harper [J. Vac. Sci. Technol. A 6 (1988) 2390] that includes the dependence of the sputter yield on the local surface morphology. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：55 / 61

页数：7

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