Angular distribution of sputtered Ge atoms by low keV Ar+ and Ne+ ion bombardment

被引：17

作者：

Chini, TK ^{[1
]}

Tanemura, M ^{[1
]}

Okuyama, F ^{[1
]}

机构：

[1] NAGOYA INST TECHNOL,DEPT SYST ENGN,APPL PHYS LAB,SHOWA KU,NAGOYA,AICHI 466,JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1996年 / 119卷 / 03期

关键词：

D O I：

10.1016/0168-583X(96)00366-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We report the measurement on the angular distribution of material sputtered from Ge target bombarded with normally incident Ar+ and Ne+ ions at room temperature. The energy of the ions was varied from 0.6 keV to 4.0 keV. Sputter deposited material was collected on Al foils and subsequently analyzed by an electron probe micro analyzer (EPMA) to obtain the angular distribution. All the results were well-fitted by distributions of the form cos(n) theta with n varying from 1.25 to 1.63. In the present experiment Ne sputtering of germanium gives rise to strong over-cosine angular distribution of sputtered material in comparison to Ar sputtering.

引用

页码：387 / 391

页数：5

共 29 条

[1] ANGULAR-DISTRIBUTION OF PARTICLES SPUTTERED FROM CU, PT AND GE TARGETS BY KEV AR+ ION-BOMBARDMENT [J].

ANDERSEN, HH ;

STENUM, B ;

SORENSEN, T ;

WHITLOW, HJ .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 6 (03) :459-465

[2] SURFACE SEGREGATION DURING ALLOY SPUTTERING AND IMPLANTATION [J].

ANDERSEN, HH ;

STENUM, B ;

SORENSEN, T ;

WHITLOW, HJ .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY) :487-494

[3] AN INVESTIGATION OF ION-BOMBARDED AND ANNEALED (111) SURFACES OF GE BY SPECTROSCOPIC ELLIPSOMETRY [J].

ASPNES, DE ;

STUDNA, AA .

SURFACE SCIENCE, 1980, 96 (1-3) :294-306

[4] ANGULAR-DISTRIBUTION AND DIFFERENTIAL SPUTTERING YIELDS FOR LOW-ENERGY LIGHT-ION IRRADIATION OF POLYCRYSTALLINE NICKEL AND TUNGSTEN [J].

BAY, HL ;

BOHDANSKY, J ;

HOFER, WO ;

ROTH, J .

APPLIED PHYSICS, 1980, 21 (04) :327-333

[5] SPUTTERING MECHANISM FOR LOW-ENERGY LIGHT-IONS [J].

BEHRISCH, R ;

MADERLECHNER, G ;

SCHERZER, BMU ;

ROBINSON, MT .

APPLIED PHYSICS, 1979, 18 (04) :391-398

[6] SPUTTERING STUDIES WITH THE MONTE-CARLO PROGRAM TRIM.SP [J].

BIERSACK, JP ;

ECKSTEIN, W .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 34 (02) :73-94

[7] THE ANGULAR-DISTRIBUTION OF PARTICLES SPUTTERED FROM CU, ZR, AND AU SURFACES BY ION-BOMBARDMENT AT GRAZING-INCIDENCE [J].

BRAUER, G ;

HASSELKAMP, D ;

KRUGER, W ;

SCHARMANN, A .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 12 (04) :458-463

[8]

Carter G., 1983, SPUTTERING PARTICLE, P231

[9] SPUTTERING OF THE GALLIUM-INDIUM EUTECTIC ALLOY IN THE LIQUID-PHASE [J].

DUMKE, MF ;

TOMBRELLO, TA ;

WELLER, RA ;

HOUSLEY, RM ;

CIRLIN, EH .

SURFACE SCIENCE, 1983, 124 (2-3) :407-422

[10]

HAUTALA M, 1985, NUCL INSTRUM METH B, V6, P466, DOI 10.1016/0168-583X(85)90004-7

← 1 2 3 →