UV transparent single-crystalline bulk AlN substrates

被引：67

作者：

Bickermann, Matthias ^{[1
]}

Epelbaum, Boris M. ^{[1
]}

Filip, Octavian ^{[1
]}

Heimann, Paul ^{[1
]}

Nagata, Shunro ^{[2
]}

Winnacker, Albrecht ^{[1
]}

机构：

[1] Univ Erlangen Nurnberg, Dept Mat Sci 6, Martensstr 7, D-91058 Erlangen, Germany

[2] JFE Mineral Co Ltd, Funct Mat Dev, Res Lab, Chiba 260, Japan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 1 | 2010年 / 7卷 / 01期

关键词：

GROWTH;

D O I：

10.1002/pssc.200982601

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Bulk aluminum nitride (AlN) is a very promising substrate material for UV optoelectronics, and its UV transparency is of high interest for UV devices designed to emit through the substrate. We report on 500 mu m thick bulk AlN substrates with plain UV transmittance exceeding 50% (i.e., absorption coefficients below 14 cm(-1)) for wavelengths from 220 nm to 380 nm in the main wafer area. Comparing the spectra of different AlN bulk samples, four major below band-gap absorption bands are identified and interpreted based on a point defect model for AlN crystals. We conclude that a further reduction of oxygen contamination of the source material led to a significant decrease of UV absorption in both colorless and yellowish areas of those substrates. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：21 / 24

页数：4

共 13 条

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