Approaches to seeded PVT growth of AIN crystals

被引：42

作者：

Epelbaum, B. M. ^{[1
]}

Bickermann, M. ^{[1
]}

Winnacker, A. ^{[1
]}

机构：

[1] Univ Erlangen Nurnberg, Dept Mat Sci 6, D-91058 Erlangen, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 275卷 / 1-2期

关键词：

Crystal morphology; Growth from vapor; Nitrides; Semiconducting aluminum compounds;

D O I：

10.1016/j.jcrysgro.2004.11.113

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have investigated the applicability of three different approaches to seeded growth of bulk AlN: (i) consequent growth of free-standing crystals up to 15mm in length; (ii) grain selection in sequential growth of bulk boules 50 mm in diameter and up to 15mm in height and (iii) seeded growth on foreign (0 0 0 1) 4H-SiC substrates 25mm in diameter. The seeding was achieved in all cases, but no one single approach was adequate to prepare bulk single crystals having the size close to the diameter of the crucible. Development of oxygen-free source material is of crucial importance for seeded growth of AlN. (C) 2004 Elsevier B. V. All rights reserved.

引用

页码：E479 / E484

页数：6

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