Orientation-dependent properties of aluminum nitride single crystals

被引:30
作者
Bickermann, M. [1 ]
Heimann, P. [1 ]
Epelbaum, B. M. [1 ]
机构
[1] Univ Erlangen Nurnberg, Dept Mat Sci 6, Martensstr 7, D-91058 Erlangen, Germany
来源
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6 | 2006年 / 3卷 / 06期
关键词
D O I
10.1002/pssc.200565255
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We have measured the optical properties of different facets and different growth zones in AN bulk single crystals grown by physical vapor transport. These crystals have a pronounced zonal structure. The systematic investigation shows that absorption and luminescence properties are similar to AN crystals and epitaxial layers grown with other techniques. However, the intensity and position of below band-gap features was found to vary strongly with the zone or facet investigated. We conclude that intrinsic defect formation and impurity concentration strongly depend on the growth direction. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:1902 / 1906
页数:5
相关论文
共 10 条
[1]   Orientation-dependent phonon observation in single-crystalline aluminum nitride [J].
Bickermann, M ;
Epelbaum, BM ;
Heimann, P ;
Herro, ZG ;
Winnacker, A .
APPLIED PHYSICS LETTERS, 2005, 86 (13) :1-3
[2]   Growth and characterization of bulk AIN substrates grown by PVT [J].
Bickermann, M ;
Epelbaum, BM ;
Kazan, M ;
Herro, Z ;
Masri, P ;
Winnacker, A .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2005, 202 (04) :531-535
[3]   Characterization of bulk AlN with low oxygen content [J].
Bickermann, M ;
Epelbaum, BM ;
Winnacker, A .
JOURNAL OF CRYSTAL GROWTH, 2004, 269 (2-4) :432-442
[4]   THE OPTICAL ABSORPTION BANDS AND THEIR ANISOTROPY IN THE VARIOUS MODIFICATIONS OF SiC [J].
Biedermann, E. .
SOLID STATE COMMUNICATIONS, 1965, 3 (10) :343-346
[5]   Approaches to seeded PVT growth of AIN crystals [J].
Epelbaum, B. M. ;
Bickermann, M. ;
Winnacker, A. .
JOURNAL OF CRYSTAL GROWTH, 2005, 275 (1-2) :E479-E484
[6]   Natural growth habit of bulk AlN crystals [J].
Epelbaum, BM ;
Seitz, C ;
Magerl, A ;
Bickermann, M ;
Winnacker, A .
JOURNAL OF CRYSTAL GROWTH, 2004, 265 (3-4) :577-581
[7]   Optical studies of bulk and homoepitaxial films of III-V nitride semiconductors [J].
Freitas, JA .
JOURNAL OF CRYSTAL GROWTH, 2005, 281 (01) :168-182
[8]   Some effects of oxygen impurities on AlN and GaN [J].
Slack, GA ;
Schowalter, LJ ;
Morelli, D ;
Freitas, JA .
JOURNAL OF CRYSTAL GROWTH, 2002, 246 (3-4) :287-298
[9]   The growth and optical properties of large, high-quality AlN single crystals [J].
Strassburg, M ;
Senawiratne, J ;
Dietz, N ;
Haboeck, U ;
Hoffmann, A ;
Noveski, V ;
Dalmau, R ;
Schlesser, R ;
Sitar, Z .
JOURNAL OF APPLIED PHYSICS, 2004, 96 (10) :5870-5876
[10]   Near band-edge transition in aluminum nitride thin films grown by metal organic chemical vapor deposition [J].
Tang, X ;
Hossain, F ;
Wongchotigul, K ;
Spencer, MG .
APPLIED PHYSICS LETTERS, 1998, 72 (12) :1501-1503