Thin film diamond UV photodetectors: Photodiodes compared with photoconductive devices for highly selective wavelength response

被引：39

作者：

Whitfield, MD ^{[1
]}

McKeag, RD ^{[1
]}

Pang, LYS ^{[1
]}

Chan, SSM ^{[1
]}

Jackman, RB ^{[1
]}

机构：

[1] UCL, LONDON WC1E 7JE, ENGLAND

来源：

关键词：

UV photodetectors; photodiode; thin film diamond; photoconductivity;

D O I：

10.1016/0925-9635(95)00419-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silicon-supported and free-standing thin films of diamond have been used to fabricate photoconductive and photodiode structures for the detection of UV light. On free-standing (80 mu m thick) material, a planar interdigitated design with 20-mu m electrode spacings is found to offer unprecedented wavelength discrimination between deep UV and visible light, with dark currents <0.1 nA, when a methane-air gas treatment is used. On silicon-supported (6 mu m thick) films, a planar photodiode utilising gold Schottky and Ti-A-Au ohmic contacts also offers a sharp cut-off in photo-response in the deep UV with no measurable dark current; photoconductive devices fabricated on this material do not show useful levels of performance. The characteristics of each type of device are discussed.

引用

页码：829 / 834

页数：6

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