Probing of electric field in pentacene using microscopic optical second harmonic generation

被引：25

作者：

Yamada, Daisuke ^{[1
]}

Manaka, Takaaki ^{[1
]}

Lim, Eunju ^{[1
]}

Tamura, Ryousuke ^{[1
]}

Iwamoto, Mitsumasa ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 08期

关键词：

D O I：

10.1063/1.2907965

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electric field distribution in a pentacene field effect transistor (FET) was examined by using microscopic optical second harmonic generation (SHG) measurements. Results showed that the enhanced SHG signal changes depending on biasing conditions. The SHG profile was estimated by analyzing a Laplace field formed in organic FET (OFET) using conformal mapping and other methods. Results showed that the observed SHG profile is in good agreement with the obtained profile, indicating that our microscopic SHG data describe the electric field distribution in OFETs with high accuracy. The decrease in the SHG intensity was also discussed based on a Poisson field formation, caused by carriers injected from a source electrode. These results show that the SHG technique is effective for probing of electric fields formed in organic materials. (C) 2008 American Institute of Physics.

引用

页数：6

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