Air stable C60 based n-type organic field effect transistor using a perfluoropolymer insulator

被引：37

作者：

Jang, Junhyuk

Kim, Ji Whan

Park, Nohhwal

Kim, Jang-Joo ^{[1
]}

机构：

[1] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea

来源：

ORGANIC ELECTRONICS | 2008年 / 9卷 / 04期

关键词：

organic field effect transistor; n-type; C-60; air stable; perfluorinated polymer gate insulator;

D O I：

10.1016/j.orgel.2008.02.011

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Air stable n-type organic field effect transistors (OFETs) based on C-60 are realized using a perfluoropolymer as the gate dielectric layer. The devices showed the field-effect mobility of 0.049 cm(2)/Vs in ambient air. Replacing the gate dielectric material by SiO2 resulted in no transistor action in ambient air. Perfluorinated gate dielectric layer reduces interface traps significantly for the n-type semiconductor even in air. (C) 2008 Elsevier B.V. All rights reserved.

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收藏

页码：481 / 486

页数：6

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