Electron beam lithography using chemically-amplified resist: Resolution and profile control

被引：13

作者：

Kudryashov, VA

Krasnov, VV

Huq, SE

Prewett, PD

Hall, TJ

机构：

[1] Inst. of Microelectronics Technology, Russian Academy of Sciences, Moscow District

[2] Central Microstructure Facility, Rutherford Appleton Laboratory, Chilton, Didcot

[3] Department of Electrical Engineering, King's College London, Strand, London

来源：

MICROELECTRONIC ENGINEERING | 1996年 / 30卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(95)00251-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of post exposure bake and softbake conditions on the sensitivity of AZPN114 has been investigated experimentally. A bilayer system for undercut structures has been achieved using two layers of AZPN114 with different softbake temperatures. A single layer of AZPN114 has also been used to produce undercut and tailored resist profiles by two different multiple exposure strategies at different beam energies.

引用

页码：305 / 308

页数：4

共 4 条

[1] Multilayer resists with variable layer parameters for submicron lithography [J].