High-speed GaAs-based resonant-cavity-enhanced 1.3 μm photodetector

被引：28

作者：

Kimukin, I ^{[1
]}

Ozbay, E

Biyikli, N

Kartaloglu, T

Aytür, O

Unlu, S

Tuttle, G

机构：

[1] Bilkent Univ, Dept Phys, TR-06533 Ankara, Turkey

[2] Bilkent Univ, Dept Elect & Elect Engn, TR-06533 Ankara, Turkey

[3] Boston Univ, Dept Elect & Comp Engn, Boston, MA 02215 USA

[4] Iowa State Univ, Microelect Res Ctr, Ames, IA 50011 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 24期

关键词：

D O I：

10.1063/1.1329628

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report GaAs-based high-speed, resonant-cavity-enhanced, Schottky barrier internal photoemission photodiodes operating at 1.3 mum. The devices were fabricated by using a microwave-compatible fabrication process. Resonance of the cavity was tuned to 1.3 mum and a nine-fold enhancement was achieved in quantum efficiency. The photodiode had an experimental setup limited temporal response of 16 ps, corresponding to a 3 dB bandwidth of 20 GHz. (C) 2000 American Institute of Physics. [S0003-6951(00)00149-2].

引用

页码：3890 / 3892

页数：3

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