Direct assessment of tunable Schottky barriers by internal photoemission spectroscopy

被引：10

作者：

Gigli, G ^{[1
]}

Lomascolo, M

De Vittorio, M

Cingolani, R

Cola, A

Quaranta, F

Sorba, L

Mueller, B

Franciosi, A

机构：

[1] Univ Lecce, Ist Nazl Fis Mat, Dipartimento Sci Mat, I-73100 Lecce, Italy

[2] Univ Lecce, CNR, Ist Mat Elettron, Dipartimento Sci Mat, I-73100 Lecce, Italy

[3] Ist Nazl Fis Mat, Lab Tecnol Avanzate Superf & Catalisi, Trieste, Italy

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 02期

关键词：

D O I：

10.1063/1.121773

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Al/GaAs(001) junctions in which the Schottky barrier was tuned through fabrication of a pseudomorphic Si interface layer were characterized by internal photoemission spectroscopy. Well-defined photoabsorption onsets corresponding to Schottky barrier heights ranging from 0.3 to 1.1 eV were observed in different devices. Our results point to the possible exploitation of tunable Schottky barriers in metal/semiconductor and metal/semiconductor/metal photon detectors. (C) 1998 American Institute of Physics. [S0003-6951(98)04428-3].

引用

页码：259 / 261

页数：3

共 19 条

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