TEMPERATURE-DEPENDENCE OF THE SCHOTTKY-BARRIER HEIGHTS OF N-TYPE SEMICONDUCTORS IN THE TEMPERATURE-RANGE OF 7-K TO 300-K

被引:8
作者
CHEN, TP
LEE, TC
FUNG, S
BELING, CD
机构
[1] Department of Physics, University of Hong Kong
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1994年 / 141卷 / 01期
关键词
D O I
10.1002/pssa.2211410131
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
[No abstract available]
引用
收藏
页码:K29 / K32
页数:4
相关论文
共 17 条
[1]   TEMPERATURE-DEPENDENCE OF THE SCHOTTKY-BARRIER HEIGHT OF TUNGSTEN ON N-TYPE AND P-TYPE SILICON [J].
ABOELFOTOH, MO .
SOLID-STATE ELECTRONICS, 1991, 34 (01) :51-55
[2]   THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].
Brillson, L. J. .
SURFACE SCIENCE REPORTS, 1982, 2 (02) :123-326
[3]   NEAR-IDEAL SCHOTTKY-BARRIER FORMATION AT METAL-GAP INTERFACES [J].
BRILLSON, LJ ;
VITURRO, RE ;
SLADE, ML ;
CHIARADIA, P ;
KILDAY, D ;
KELLY, MK ;
MARGARITONDO, G .
APPLIED PHYSICS LETTERS, 1987, 50 (19) :1379-1381
[4]  
CHEN TP, 1993, IN PRESS SOLID STATE
[5]   SCHOTTKY-LIKE BEHAVIOR OF THE GAP(110)/AG INTERFACE [J].
CHIARADIA, P ;
FANFONI, M ;
NATALETTI, P ;
DEPADOVA, P ;
VITURRO, RE ;
BRILLSON, LJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (02) :195-198
[6]   EQUALITY OF TEMPERATURE DEPENDENCE OF GOLD-SILICON SURFACE BARRIER + SILICON ENERGY GAP IN AU N-TYPE SI DIODES ( PHOTOEMISSION THRESHOLD ANALYSIS 100-370 DEGREES K E ) [J].
CROWELL, CR ;
SZE, SM ;
SPITZER, WG .
APPLIED PHYSICS LETTERS, 1964, 4 (05) :91-&
[7]   SIMPLE MODEL FOR INTERNAL PHOTOEMISSION [J].
DALAL, VL .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (06) :2274-&
[8]   ANALYSIS OF IV MEASUREMENTS ON PTSI-SI SCHOTTKY STRUCTURES IN A WIDE TEMPERATURE-RANGE [J].
DONOVAL, D ;
BARUS, M ;
ZDIMAL, M .
SOLID-STATE ELECTRONICS, 1991, 34 (12) :1365-1373
[9]   TEMPERATURE-DEPENDENCE OF SCHOTTKY-BARRIER HEIGHT ON SI - EXPERIMENTAL-EVIDENCE FOR FERMI ENERGY PINNING RELATIVE TO EITHER VALENCE OR CONDUCTION-BAND [J].
DUBOZ, JY ;
BADOZ, PA ;
DAVITAYA, FA ;
ROSENCHER, E .
JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (01) :101-104
[10]   EVIDENCE FOR FERMI-ENERGY PINNING RELATIVE TO EITHER VALENCE OR CONDUCTION-BAND IN SCHOTTKY BARRIERS [J].
DUBOZ, JY ;
BADOZ, PA ;
DAVITAVA, FA ;
ROSENCHER, E .
PHYSICAL REVIEW B, 1989, 40 (15) :10607-10610