共 16 条
[2]
CERRINA F, 1985, PHYS REV B, V31, P8314, DOI 10.1103/PhysRevB.31.8314
[3]
UNPINNED SCHOTTKY-BARRIER FORMATION AT METAL-GAP INTERFACES - A REPRESENTATIVE III-V COMPOUND INTERFACE
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1987, 5 (04)
:1075-1079
[4]
CHIARADIA P, 1987, VUOTO, V16, P83
[5]
ELECTRONIC-STRUCTURE AND SCHOTTKY-BARRIER FORMATION OF AG ON N-TYPE GAAS(110)
[J].
PHYSICAL REVIEW B,
1985, 32 (02)
:918-923
[7]
TIGHT-BINDING THEORY OF HETEROJUNCTION BAND LINEUPS AND INTERFACE DIPOLES
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1986, 4 (04)
:1068-1073
[8]
METAL GALLIUM SELENIDE INTERFACES - OBSERVATION OF THE TRUE SCHOTTKY LIMIT
[J].
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS,
1982, 15 (06)
:L159-L164
[10]
SCHOTTKY-BARRIER FORMATION OF AG ON GAAS(110)
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1983, 1 (03)
:581-587