UNPINNED SCHOTTKY-BARRIER FORMATION AT METAL-GAP INTERFACES - A REPRESENTATIVE III-V COMPOUND INTERFACE

被引：31

作者：

CHIARADIA, P

BRILLSON, LJ

SLADE, M

VITURRO, RE

KILDAY, D

TACHE, N

KELLY, M

MARGARITONDO, G

机构：

[1] XEROX CORP,WEBSTER RES CTR,WEBSTER,NY 14580

[2] UNIV WISCONSIN,DEPT PHYS,MADISON,WI 53706

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 04期

关键词：

D O I：

10.1116/1.583731

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1075 / 1079

页数：5

共 29 条

[1] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].

Brillson, L. J. .

SURFACE SCIENCE REPORTS, 1982, 2 (02) :123-326

[2] CHEMICAL BASIS FOR INP-METAL SCHOTTKY-BARRIER FORMATION [J].

BRILLSON, LJ ;

BRUCKER, CF ;

KATNANI, AD ;

STOFFEL, NG ;

MARGARITONDO, G .

APPLIED PHYSICS LETTERS, 1981, 38 (10) :784-786

[3] INTERFACE CHEMICAL-REACTION AND DIFFUSION OF THIN METAL-FILMS ON SEMICONDUCTORS [J].

BRILLSON, LJ .

THIN SOLID FILMS, 1982, 89 (04) :461-469

[4] ABSENCE OF FERMI LEVEL PINNING AT METAL-INX GA1-XAS (100) INTERFACES [J].

BRILLSON, LJ ;

SLADE, ML ;

VITURRO, RE ;

KELLY, MK ;

TACHE, N ;

MARGARITONDO, G ;

WOODALL, JM ;

KIRCHNER, PD ;

PETTIT, GD ;

WRIGHT, SL .

APPLIED PHYSICS LETTERS, 1986, 48 (21) :1458-1460

[5] FERMI LEVEL PINNING AND CHEMICAL INTERACTIONS AT METAL-INXGA1-XAS(100) INTERFACES [J].

BRILLSON, LJ ;

SLADE, ML ;

VITURRO, RE ;

KELLY, MK ;

TACHE, N ;

MARGARITONDO, G ;

WOODALL, JM ;

KIRCHNER, PD ;

PETTIT, GD ;

WRIGHT, SL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04) :919-923

[6]

BRILLSON LJ, UNPUB

[7]

CERRINA F, 1985, PHYS REV B, V31, P8314, DOI 10.1103/PhysRevB.31.8314

[8] SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS [J].

COWLEY, AM ;

SZE, SM .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) :3212-&

[9]

EASTMAN DE, 1972, TECHNIQUES METALS 1, V6, P441

[10] SCHOTTKY BARRIERS - AN EFFECTIVE WORK FUNCTION MODEL [J].

FREEOUF, JL ;

WOODALL, JM .

APPLIED PHYSICS LETTERS, 1981, 39 (09) :727-729

← 1 2 3 →