Fabrication of a nanophotonic quantum dot waveguide and photodetector integrated device

被引：7

作者：

Huang, L. ^{[1
]}

Hegg, M. C. ^{[2
]}

Wang, C. -J. ^{[2
]}

Lin, L. Y. ^{[1
,2
]}

机构：

[1] Univ Washington, Dept Phys, Seattle, WA 98195 USA

[2] Univ Washington, Dept Elect Engn, Seattle, WA 98195 USA

来源：

MICRO & NANO LETTERS | 2007年 / 2卷 / 04期

关键词：

D O I：

10.1049/mnl:20070053

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The authors present the design and fabrication of a nanophotonic waveguide and photodetector integrated device by molecular self-assembly of nanocrystal quantum dots (QD) and two different nano-gap formation techniques, namely electromigration-induced break-junction technique and electron beam lithography nano-gap patterning. A QD waveguide with similar to 50 nm width integrated with a nano-scale QD photodetector is achieved. A comparison is made between the two nano-gap techniques. In addition, a method to achieve high alignment accuracy for nanophotonic integration is discussed.

引用

页码：103 / 106

页数：4

共 19 条

[1]

Astafiev O, 2003, ELECTRON TRANSPORT IN QUANTUM DOTS, P363

[2] Electrooptic modulation of silicon-on-insulator submicrometer-size waveguide devices [J].