Pt-assisted oxidation of (100)-Ge/high-k interfaces and improvement of their electrical quality

被引：20

作者：

Henkel, Christoph ^{[1
]}

Bethge, Ole ^{[1
]}

Abermann, Stephan ^{[2
]}

Puchner, Stefan ^{[3
]}

Hutter, Herbert ^{[4
]}

Bertagnolli, Emmerich ^{[1
]}

机构：

[1] Vienna Univ Technol, Inst Solid State Elect, A-1040 Vienna, Austria

[2] Austrian Inst Technol GmbH AIT, Dept Energy, A-1210 Vienna, Austria

[3] Kompetenzzentrum Automobil & Ind Elekt GmbH KAI, A-9524 Villach, Austria

[4] Vienna Univ Technol, Inst Chem Technol & Analyt, A-1060 Vienna, Austria

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 15期

基金：

奥地利科学基金会;

关键词：

GE;

D O I：

10.1063/1.3500822

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the improvement of electrical quality of (100)-Ge/high-k-dielectric interfaces by introducing thin Pt top layers on the dielectric and subsequent oxidative treatments or using a Pt-deposition process with inherent oxidative components. Here, deposition of thin physical vapor deposition-Pt layers, combined with subsequent oxygen treatments, or oxygen assisted atomic layer deposition of Pt on these dielectrics, is applied. Strong reduction of interface trap densities down to mid-10(11) eV(-1) cm(-2) is achieved. The approach is shown for Pt/ZrO2 /La2O3 /Ge, Pt/ZrO2/GeO2/Ge, and Pt/ZrO2/Ge gate stacks. By x-ray photoelectron spectroscopy evidence is given for oxygen enrichment at Ge/high-k-dielectric interfaces, to be responsible for the improved electrical properties. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3500822]

引用

页数：3

共 15 条

[11] Surface reactions during atomic layer deposition of Pt derived from gas phase infrared spectroscopy [J].

Kessels, W. M. M. ;

Knoops, H. C. M. ;

Dielissen, S. A. F. ;

Mackus, A. J. M. ;

van de Sanden, M. C. M. .

APPLIED PHYSICS LETTERS, 2009, 95 (01)

[12] Ge/GeO2 Interface Control with High-Pressure Oxidation for Improving Electrical Characteristics [J].

Lee, Choong Hyun ;

Tabata, Toshiyuki ;

Nishimura, Tomonori ;

Nagashio, Kosuke ;

Kita, Koji ;

Toriumi, Akira .

APPLIED PHYSICS EXPRESS, 2009, 2 (07)

[13]

Schroder DK, 1998, Semiconductor Material and Device Characterization

[14] Impact of High Pressure O2 Annealing on Amorphous LaLuO3/Ge MIS Capacitors [J].

Tabata, Toshiyuki ;

Lee, Choong Hyun ;

Kita, Koji ;

Toriumi, Akira .

PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS 6, 2008, 16 (05) :479-486

[15] Opportunities and challenges for Ge CMOS - Control of interfacing field on Ge is a key [J].

Toriumi, Akira ;

Tabata, Toshiyuki ;

Lee, Choong Hyun ;

Nishimura, Tomonori ;

Kita, Koji ;

Nagashio, Kosuke .

MICROELECTRONIC ENGINEERING, 2009, 86 (7-9) :1571-1576

← 1 2 →