High-gain complementary inverter with InGaZnO/pentacene hybrid ambipolar thin film transistors

被引：28

作者：

Liu, Po-Tsun ^{[1
]}

Chou, Yi-Teh ^{[2
]}

Teng, Li-Feng ^{[2
]}

Fuh, Chur-Shyang ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Photon, Display Inst, Hsinchu 30010, Taiwan

[2] Natl Chiao Tung Univ, Dept Photon, Inst Electroopt Engn, Hsinchu 30010, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 08期

关键词：

annealing; electron mobility; gallium compounds; hole mobility; indium compounds; invertors; MIS devices; organic compounds; organic-inorganic hybrid materials; semiconductor materials; semiconductor-insulator boundaries; thin film transistors; zinc compounds;

D O I：

10.1063/1.3483616

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ambipolar thin film transistors (TFTs) with InGaZnO/pentacene heterostructure channels are demonstrated for a high-voltage-gain complementary metal oxide semiconductor (CMOS) inverter. The ambipolar TFT exhibits a electron mobility of 23.8 cm(2)/V s and hole mobility of 0.15 cm(2)/V s for the InGaZnO and pentacene, respectively. The thermal annealing process was also studied to adjust electron concentration reducing operating voltage of the CMOS inverter. The voltage gain achieves as high as 60 obtained in the first and third quadrants of the voltage transfer characteristic. The high performance and simple manufacture of the heterostructure CMOS inverter show promise as critical components in various electrical applications. (C) 2010 American Institute of Physics. [doi:10.1063/1.3483616]

引用

页数：3

共 14 条

[1] New air-stable n-channel organic thin film transistors [J].