Ambipolar transport behavior in In2O3/pentacene hybrid heterostructure and their complementary circuits

被引：10

作者：

Dhananjay ^{[1
]}

Ou, Chun-Wei ^{[2
]}

Yang, Chuan-Yi ^{[2
]}

Wu, Meng-Chyi ^{[2
]}

Chu, Chih-Wei ^{[1
,3
]}

机构：

[1] Acad Sinica, Res Ctr Appl Sci, Taipei 11529, Taiwan

[2] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 30013, Taiwan

[3] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30013, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 03期

关键词：

D O I：

10.1063/1.2949872

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this Letter, ambipolar transport properties of a bilayer of In2O3 and a pentacene heterostructure have been realized. While In2O3 thin film transistors exhibited a n-channel behavior, pentacene presumed p-channel characteristics on bare SiO2/p-Si substrates. However, when a bilayer of In2O3/pentacene was realized on the gate dielectrics, the hybrid structure exhibited both n- and p-channel conductions, depicting an ambipolar transistor behavior. When two identical ambipolar transistors were integrated to establish an inverter structure, a voltage gain of 10 was obtained. The results indicate that these heterostructures can be utilized for the complementary circuits. (C) 2008 American Institute of Physics.

引用

收藏

页数：3

相关论文

共 13 条

[1] Dependence of channel thickness on the performance of In2O3 thin film transistors [J].

Dhananjay ;

Cheng, Shiau-Shin ;

Yang, Chuan-Yi ;

Ou, Chun-Wei ;

Chuang, You-Che ;

Wu, M. Chyi ;

Chu, Chih-Wei .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2008, 41 (09)

[2] Realization of In2O3 thin film transistors through reactive evaporation process [J].

Dhananjay ;

Chu, Chih-Wei .

APPLIED PHYSICS LETTERS, 2007, 91 (13)

[3] Organic field-effect bipolar transistors [J].

Dodabalapur, A ;

Katz, HE ;

Torsi, L ;

Haddon, RC .

APPLIED PHYSICS LETTERS, 1996, 68 (08) :1108-1110

[4] Achieving ambipolar vertical organic transistors via nanoscale interface modification [J].

Li, Sheng-Han ;

Xu, Zheng ;

Ma, Liping ;

Chu, Chih-Wei ;

Yang, Yang .

APPLIED PHYSICS LETTERS, 2007, 91 (08)

[5] Complementary inverter using high mobility air-stable perylene di-imide derivatives [J].

Ling, Mang-mang ;

Bao, Zhenan ;

Erk, Peter ;

Koenemann, Martin ;

Gomez, Marcos .

APPLIED PHYSICS LETTERS, 2007, 90 (09)

[6] Solution-processed ambipolar organic field-effect transistors and inverters [J].

Meijer, EJ ;

De Leeuw, DM ;

Setayesh, S ;

Van Veenendaal, E ;

Huisman, BH ;

Blom, PWM ;

Hummelen, JC ;

Scherf, U ;

Klapwijk, TM .

NATURE MATERIALS, 2003, 2 (10) :678-682

[7] Anomalous p-channel amorphous oxide transistors based on tin oxide and their complementary circuits [J].

Ou, Chun-Wei ;

Ho, Zhong Yo ;

Chuang, You-Che ;

Cheng, Shiau-Shin ;

Wu, Meng-Chyi ;

Ho, Kuo-Chuan ;

Chu, Chih-Wei .

APPLIED PHYSICS LETTERS, 2008, 92 (12)

[8] Ambipolar light-emitting organic field-effect transistors using a wide-band-gap blue-emitting small molecule [J].

Sakanoue, Tomo ;

Yahiro, Masayuki ;

Adachi, Chihaya ;

Uchiuzou, Hiroyuki ;

Takahashi, Takayoshi ;

Toshimitsu, Akio .

APPLIED PHYSICS LETTERS, 2007, 90 (17)

[9] Organic heterostructure field-effect transistors using C60 and amorphous spirolinked compound [J].

Saragi, Tobat P. I. ;

Salbeck, Josef .

APPLIED PHYSICS LETTERS, 2006, 89 (25)

[10] Organic inverter circuits employing ambipolar pentacene field-effect transistors [J].

Singh, Th. B. ;

Senkarabacak, P. ;

Sariciftci, N. S. ;

Tanda, A. ;

Lackner, C. ;

Hagelauer, R. ;

Horowitz, Gilles .

APPLIED PHYSICS LETTERS, 2006, 89 (03)