Realization of In2O3 thin film transistors through reactive evaporation process

被引：59

作者：

Dhananjay

Chu, Chih-Wei ^{[1
]}

机构：

[1] Acad Sinica, Res Ctr Appl Sci, Taipei 11529, Taiwan

[2] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30013, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 13期

关键词：

D O I：

10.1063/1.2789788

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In2O3 thin films have been grown by reactive evaporation of indium in ambient oxygen. The films were structurally characterized by x-ray diffraction (XRD) and atomic force microscopy techniques. The results of XRD revealed that the films were polycrystalline in nature with preferred (222) orientation. The as-grown films were subjected to various annealing treatments to modulate the conductivity of the films for thin film transistors (TFTs). TFTs fabricated on SiO2 gate dielectric exhibited an on/off ratio of 10(4) and a field-effect mobility of 27 cm(2)/V s. High on-state current makes them potential candidates for flat-panel display devices. (c) 2007 American Institute of Physics.

引用

收藏

页数：3

相关论文

共 18 条

[1] Polished TFT's: Surface roughness reduction and its correlation to device performance improvement [J].

Chan, ABY ;

Nguyen, CT ;

Ko, PK ;

Chan, STH ;

Wong, SS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (03) :455-463

[2] Evolution of nanocrystalline silicon thin film transistor channel layers [J].

Cheng, IC ;

Allen, S ;

Wagner, S .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2004, 338 :720-724

[3] InOx semiconductor films deposited on glass substrates for transparent electronics [J].

de Carvalho, C. Nunes ;

Lavareda, G. ;

Amaral, A. ;

Conde, O. ;

Ramos, A. R. .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2006, 352 (23-25) :2315-2318

[4] Transparent thin-film transistors with zinc indium oxide channel layer [J].

Dehuff, NL ;

Kettenring, ES ;

Hong, D ;

Chiang, HQ ;

Wager, JF ;

Hoffman, RL ;

Park, CH ;

Keszler, DA .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (06)

[5] Low threshold voltage ZnO thin film transistor with a Zn0.7Mg0.3O gate dielectric for transparent electronics [J].

Dhananjay ;

Krupanidhi, S. B. .

JOURNAL OF APPLIED PHYSICS, 2007, 101 (12)

[6] Room temperature ferromagnetism in transition metal (V, Cr, Ti) doped In2O3 [J].

Gupta, Amita ;

Cao, Hongtao ;

Parekh, Kinnari ;

Rao, K. V. ;

Raju, A. R. ;

Waghmare, Umesh V. .

JOURNAL OF APPLIED PHYSICS, 2007, 101 (09)

[7] Effects of channel stoichiometry and processing temperature on the electrical characteristics of zinc tin oxide thin-film transistors [J].

Hoffman, R. L. .

SOLID-STATE ELECTRONICS, 2006, 50 (05) :784-787

[8] N-IN2O3-P-INP SOLAR-CELLS [J].

ITO, K ;

NAKAZAWA, T .

SURFACE SCIENCE, 1979, 86 (JUL) :492-497

[9]

*JCPDS, 441087 JCPDS

[10] Ferroelectric-gate thin-film transistors using indium-tin-oxide channel with large charge controllability [J].

Miyasako, T ;

Senoo, M ;

Tokumitsu, E .

APPLIED PHYSICS LETTERS, 2005, 86 (16) :1-3